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WE-AGDT Auxiliary Gate Drive Transformer NEW

for SiC-MOSFET and IGBT

 SizeL
(mm)
W
(mm)
H
(mm)
Mount
NEW EP7 11.3 10.95 11.94 SMT

Characteristics

  • Interwinding capacitance down to 6.8 pF
  • Tiny surface mount EP7 package
  • Dielectric insulation up to 4 kV AC
  • Basic insulation
  • Safety: IEC62368-1 / IEC61558-2-16
  • Common control voltages for SiC MOSFET’s
  • Flyback with primary side regulation
  • Wide range input voltages 9 V to 36 V
  • High efficiency and very compact solution
  • Reference designs with Analog Devices and Texas Instruments
  • Operating temperature: -40 °C up to +130 °C

Applications

  • Industrial drives
  • AC motor inverters
  • Electric vehicles
  • Powertrain
  • Battery chargers
  • Solar inverters
  • Data centers
  • Uninterruptible power supplies
  • Active power factor correction
  • SiC-MOSFET based power converter

Drive hard. Drive safe.

The WE-AGDT series from Würth Elektronik allows implementing discrete SiC gate driver designs easier than ever before.

Video and more

Products

EP7
Order Code Data­sheet DownloadsVin
(V)
VOut1
(V)
VOut2
(V)
CWW 1
(pF)
fswitch
(kHz)
IC ReferencePO
(W)
Samples
750318131SPEC
6 files 9 - 18 15 -4 7.5 350 LT8302 6
750318114SPEC
6 files 9 - 18 19 6.8 350 LT8302 6
750317894SPEC
6 files 9 - 18 15 -4 7 350 LM5180 3
750317893SPEC
6 files 9 - 18 19 6.8 350 LM5180 3
750318208SPEC
6 files 18 - 36 15 -4 7 350 LM5180 5
750318207SPEC
6 files 18 - 36 19 8.2 350 LM5180 5
Order Code Data­sheet
750318131SPEC
750318114SPEC
750317894SPEC
750317893SPEC
750318208SPEC
750318207SPEC
Samples
Order Code Data­sheet DownloadsVin
(V)
VOut1
(V)
VOut2
(V)
CWW 1
(pF)
fswitch
(kHz)
IC ReferencePO
(W)
Samples